Munekatsu Nakagawa
Papers
1
Total Citations
3
H-Index
1
About
Munekatsu Nakagawa is a leading figure in advanced embedded memory technology, with his work centered on high-performance, high-density flash memory for next-generation microcontrollers (MCUs). His key research areas include embedded SG-MONOS (Split-Gate Metal-Oxide-Nitride-Oxide-Silicon) flash macros, sense amplifier design, and memory architectures optimized for the AI-IoT-5G era. Nakagawa’s major contribution is the development of a 40nm embedded SG-MONOS flash macro that achieves a remarkable 200MHz random read operation and a density of 7.91Mb/mm², a critical enabler for endpoint devices requiring both high intelligence and real-time responsiveness. To overcome read-speed limitations, he pioneered a charge-assisted offset cancellation sense amplifier, a novel circuit technique that significantly improves sensing margin and yield. This work, published in 2021, directly addresses the demands of smarter societies and factories, supporting applications in home automation, machine vision, and robotics. With 3 citations, this paper represents a foundational step in pushing embedded flash performance boundaries, showcasing Nakagawa’s impact on the trajectory of high-end MCU design for intelligent, connected systems.
Research Focus
Key Achievements
Top Papers
- 1