Tomoya Ogawa

Renesas Electronics (Japan)

Papers

2

Total Citations

13

H-Index

2

About

Tomoya Ogawa is a leading figure in advanced non-volatile memory design, with a focused expertise in embedded flash technology for high-performance microcontroller units (MCUs). His work is pivotal to the evolution of endpoint devices powering the AI-driven Internet of Things (IoT), where the demand for higher intelligence, speed, and density is relentless. Ogawa’s major contributions center on the development of a 40-nm embedded SG-MONOS (Split-Gate Metal-Oxide-Nitride-Oxide-Silicon) flash macro, a breakthrough that achieves a remarkable 200-MHz random read operation and a density of 7.91 Mb/mm². This was made possible through his innovative charge-assisted offset cancellation sense amplifier, a key circuit technique that overcomes read-disturb and offset limitations. His most-cited paper (2022, 10 citations) and its companion work (2021, 3 citations) detail this achievement, directly addressing the crossover needs of high-end MCUs for applications like home automation, machine vision, and robotics. Ogawa’s research not only pushes the boundaries of embedded memory performance but also enables the smarter, more cost-effective endpoint devices essential for next-generation smart societies and factories.

Research Focus

Key Achievements

2
H-Index
2
Papers
13
Total Citations
7
Avg Citations/Paper
🏆 Most Cited Paper
A 40-nm Embedded SG-MONOS Flash Macro for High-End MCU Achieving 200-MHz Random Read Operation and 7.91-Mb/mm<sup>2</sup> Density With Charge-Assisted Offset Cancellation Sense Amplifier
10 citations · 2022
📈 Most Prolific Year: 2022 (1 Papers)
🤝 Key Collaborators: 15
🏛 Institutions: Renesas Electronics (Japan)

Top Papers

  1. 1
  2. 2

Key Collaborators

Contact & Links

Available for collaboration
Content generated · 13 days ago