Yudong Li
Papers
2
Total Citations
10
H-Index
2
About
Yudong Li is a researcher specializing in the radiation effects on semiconductor devices, with a particular focus on power electronics and imaging systems used in harsh environments. His work addresses critical challenges in space exploration and nuclear power plant operations, where electronic components must withstand high levels of ionizing radiation. Li’s major contributions include investigating total ionizing dose (TID) effects on silicon carbide (SiC) MOSFETs, specifically examining how varying gate oxide thickness influences device reliability under gamma radiation. His 2023 study on this topic, which has garnered 5 citations, provides essential insights for designing radiation-hardened power electronics. Additionally, Li has explored the impact of gamma irradiation on CMOS image sensors, quantifying how radiation damage degrades camera signal-to-noise ratios—a vital consideration for nuclear robotics. With both of his most-cited papers published in 2023, Li is establishing a strong foundation in radiation effects research, offering practical guidance for developing robust electronic systems in space and nuclear applications. His work bridges materials science and device engineering, making him a valuable contributor to the field of radiation-hardened electronics.
Research Focus
Key Achievements
Top Papers
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- 2