Yutang Xiang
Papers
1
Total Citations
5
H-Index
1
About
Yutang Xiang is a rising expert in the radiation effects and reliability of wide-bandgap power semiconductor devices, with a primary focus on silicon carbide (SiC) MOSFETs for aerospace and high-energy physics applications. His work addresses a critical challenge: ensuring these advanced power devices can withstand the harsh total ionizing dose (TID) radiation found in space environments. In his most-cited 2023 study, Xiang systematically investigated how different gate oxide thicknesses influence the TID effects from cobalt-60 gamma ray irradiation on SiC MOSFETs. He demonstrated that while thicker gate oxides can improve certain aspects of device reliability, they also introduce complex trade-offs in threshold voltage stability and long-term performance under radiation. This research provides essential design guidelines for engineers developing radiation-hardened power electronics. With 5 citations already, his work is gaining traction among researchers seeking to balance single-event effects (SEE) resistance with TID tolerance. Xiang’s contributions are particularly valuable as SiC technology becomes increasingly vital for next-generation satellite power systems and nuclear instrumentation, where device failure is not an option.
Research Focus
Key Achievements
Top Papers
- 1