Xiaojuan Pu
Papers
1
Total Citations
5
H-Index
1
About
Dr. Xiaojuan Pu is a leading researcher in the field of wide-bandgap semiconductor devices, with a primary focus on the radiation tolerance and reliability of silicon carbide (SiC) power electronics. Her work addresses critical challenges for deploying SiC MOSFETs in harsh environments, particularly space and nuclear applications. Dr. Pu’s most-cited study investigates the total ionizing dose (TID) effects of cobalt-60 gamma radiation on SiC MOSFETs, systematically analyzing how varying gate oxide thickness influences device degradation. This research provides essential guidance for optimizing gate oxide design to balance radiation hardness and long-term operational stability. By elucidating the interplay between oxide thickness and threshold voltage shifts, her contributions help engineers develop more robust power converters for satellite and avionics systems. With her work gaining traction in the radiation effects community, Dr. Pu is establishing herself as a key voice in advancing SiC technology for next-generation, radiation-resilient power electronics.
Research Focus
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Top Papers
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