Xiaowen Liang
Papers
1
Total Citations
5
H-Index
1
About
Xiaowen Liang is a leading researcher in the field of wide-bandgap semiconductor device reliability, with a primary focus on silicon carbide (SiC) power electronics and their performance in extreme radiation environments. Her work addresses the critical challenge of deploying SiC MOSFETs in space and nuclear applications, where devices must withstand both total ionizing dose (TID) effects and single event effects (SEE). Liang’s most cited study, “Total ionizing dose effects of ⁶⁰Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness,” investigates how varying gate oxide thickness (tox) influences device degradation under gamma radiation. This research provides essential design guidelines for enhancing the long-term reliability of SiC power devices in harsh environments, demonstrating that optimized oxide thickness can significantly improve radiation hardness. With over 5 citations on this key paper, Liang’s contributions are gaining recognition among peers working on radiation-tolerant electronics. Her work is particularly valuable for engineers and scientists developing robust power systems for satellites, deep-space probes, and nuclear reactors, where device failure is not an option. Liang continues to advance the understanding of SiC device physics, bridging the gap between laboratory research and real-world deployment.
Research Focus
Key Achievements
Top Papers
- 1