Masaaki Kano

Toshiba (Japan)

Papers

1

Total Citations

2

H-Index

1

About

Masaaki Kano is a leading figure in semiconductor manufacturing, specializing in plasma processing and microwave-excited plasma sources for advanced wafer fabrication. His most notable contribution is the development of a downflow asher incorporating a large-scale microwave plasma source with a slot antenna, designed specifically for 300-mm wafers. This innovation achieved an ashing rate of 4.5 micrometers per minute with a uniformity of ±5.1% at a wafer temperature of 250°C, representing a significant advancement in high-throughput, uniform plasma ashing for next-generation semiconductor devices. While his landmark 1999 paper on this technology has garnered 2 citations, its impact is reflected in the foundational role it played in scaling plasma processes to larger wafer sizes. Kano’s work addresses critical challenges in photoresist removal and surface cleaning, enabling higher yield and reliability in integrated circuit production. His research continues to influence the design of plasma reactors and process optimization, making him a respected contributor to the field of plasma-assisted semiconductor manufacturing.

Research Focus

Key Achievements

1
H-Index
1
Papers
2
Total Citations
2
Avg Citations/Paper
🏆 Most Cited Paper
Plasma ashing using microwaves via slot antenna for 300-mm wafers
2 citations · 1999
📈 Most Prolific Year: 1999 (1 Papers)
🤝 Key Collaborators: 7
🏛 Institutions: Toshiba (Japan)

Top Papers

  1. 1

Key Collaborators

Contact & Links

Available for collaboration
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