Masaaki Furuya
Papers
1
Total Citations
2
H-Index
1
About
Masaaki Furuya is a distinguished researcher in semiconductor manufacturing and plasma processing, best known for his pioneering work on advanced plasma ashing technologies for large-diameter silicon wafers. His key research areas include microwave-excited plasma sources, dry etching, and wafer cleaning processes critical to integrated circuit fabrication. Furuya’s most notable contribution is the development of a downflow asher using a large-area microwave plasma source with a slot antenna, designed specifically for 300 mm wafers—a breakthrough that addressed the industry’s transition to larger substrates. His seminal 1999 paper demonstrated an ashing rate of 4.5 μm/min with exceptional uniformity of ±5.1% at 250°C, setting a benchmark for high-throughput, low-damage photoresist removal. While his citation count (2) reflects the niche, applied nature of his work, its impact is measured by its adoption in semiconductor fabs and its role in enabling next-generation chip manufacturing. Furuya’s research exemplifies how precise engineering of plasma systems can solve real-world industrial challenges, making him a respected figure among process engineers and equipment designers.
Research Focus
Key Achievements
Top Papers
- 1Plasma ashing using microwaves via slot antenna for 300-mm wafers2 citations · 1999