Haonan Feng
Papers
1
Total Citations
5
H-Index
1
About
Haonan Feng is a researcher focused on the radiation effects and reliability of silicon carbide (SiC) power devices, a critical area for next-generation space and nuclear applications. His work investigates how total ionizing dose (TID) from gamma radiation impacts SiC MOSFETs, with a particular emphasis on the role of gate oxide thickness in device performance and failure mechanisms. Feng’s most-cited study, “Total ionizing dose effects of <sup>60</sup> Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness,” demonstrates his contribution to understanding how varying oxide layers influence radiation tolerance—a key design parameter for improving device longevity in harsh environments. This work has garnered early recognition with 5 citations, signaling its relevance to the growing field of wide-bandgap semiconductor reliability. By bridging materials science and device physics, Feng’s research helps guide the development of more robust power electronics for aerospace and defense systems. His findings offer practical insights for engineers and scientists working to enhance the radiation hardness of SiC technologies, making his contributions valuable for both academic study and industrial application.
Research Focus
Key Achievements
Top Papers
- 1