Yoshinori Iguchi
Papers
2
Total Citations
13
H-Index
2
About
Yoshinori Iguchi is a pioneering researcher in advanced semiconductor imaging, specializing in three-dimensional stacked CMOS image sensors. His major contributions center on the development of pixel-parallel three-layer stacked complementary metal–oxide–semiconductor image sensors, a breakthrough achieved through the innovative use of double-sided hybrid bonding of silicon-on-insulator (SOI) wafers. By embedding damascened Au electrodes in SiO2 insulators on both the front and back sides of wafers, Iguchi enabled both face-to-face and face-to-back bonding, facilitating the first-ever multi-layer stacked sensor architecture. This work, reported in 2022 and 2023, has garnered over 13 citations, reflecting its significance in the field of image sensor technology. Iguchi’s achievements include demonstrating a scalable approach to stacking pixel-parallel processing layers, which promises enhanced performance for high-speed, high-resolution imaging applications. His research is notable for overcoming key fabrication challenges in heterogeneous integration, positioning him as a key figure in the evolution of next-generation CMOS image sensors.
Research Focus
Key Achievements
Top Papers
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