Masahide Goto
Papers
2
Total Citations
13
H-Index
2
About
Masahide Goto is a leading figure in advanced CMOS image sensor design, with his work centered on three-dimensional integration and pixel-parallel processing architectures. His most significant contribution is the pioneering development of the first pixel-parallel three-layer stacked CMOS image sensors, a breakthrough that dramatically increases processing speed and functionality within a compact footprint. To achieve this, Goto innovated a double-sided hybrid bonding technique using silicon-on-insulator (SOI) wafers, embedding damascened Au electrodes in SiO₂ insulators to enable both face-to-face and face-to-back bonding. This method overcomes critical stacking limitations, allowing for the creation of multi-layer sensor systems. While his most-cited paper (2023, 9 citations) and a related 2022 work (4 citations) are early in their citation lifecycle, they represent foundational advances in a rapidly evolving field. Goto’s research is pivotal for next-generation applications in high-speed imaging, machine vision, and computational photography, establishing him as a key innovator in the push toward denser, more intelligent imaging systems.
Research Focus
Key Achievements
Top Papers
- 1
- 2