Time-dependent gate oxide breakdown

Top Researchers

Xue‐Feng Yu

Institution: —

Dan Zhang

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Akinori Takeyama

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Takahiro Makino

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Shuichi Okubo

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Yūki Tanaka

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Toru Yoshie

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Yasuto Hijikata

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Takeshi Ohshima

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Ying Wei

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Radiation Response of Negative Gate Biased SiC MOSFETs

Akinori Takeyama, Takahiro Makino, Shuichi Okubo, Yūki Tanaka, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima

Citations: 19 • 2019

Total ionizing dose effects of <sup>60</sup> Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness

Haonan Feng, Xiaowen Liang, Jing Sun, Jie Feng, Ying Wei, Teng Zhang, Xiaojuan Pu, Dan Zhang, Yutang Xiang, Yudong Li, Xue‐Feng Yu, Qi Guo

Citations: 5 • 2023