Yasuto Hijikata
Papers
1
Total Citations
19
H-Index
1
About
Yasuto Hijikata is a leading researcher in the field of power semiconductor devices, with a particular focus on the radiation tolerance of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). His work addresses a critical challenge: ensuring the reliability of next-generation power electronics in extreme environments, such as nuclear power plants and space missions. Hijikata’s most cited paper, “Radiation Response of Negative Gate Biased SiC MOSFETs” (2019, 19 citations), investigates how gate bias influences device degradation under radiation exposure, providing essential insights for designing robust, high-performance components. By systematically analyzing the interplay between bias conditions and radiation-induced damage, he has helped establish guidelines for the safe operation of SiC MOSFETs in high-radiation settings. His contributions are pivotal for advancing SiC technology beyond conventional applications, enabling its use in safety-critical systems where failure is not an option. With a growing citation record, Hijikata continues to shape the future of resilient power electronics, bridging the gap between laboratory research and real-world deployment.
Research Focus
Key Achievements
Top Papers
- 1Radiation Response of Negative Gate Biased SiC MOSFETs19 citations · 2019