M. Farley

Eaton (United States), Ibis Reproductive Health

Papers

2

Total Citations

10

H-Index

2

About

M. Farley is a key figure in the development of advanced ion implantation technology, with a career focused on high-current systems for semiconductor manufacturing. His most notable contributions center on the design and optimization of production-grade implanters, particularly for the creation of SIMOX (Separation by Implantation of Oxygen) wafers. Farley’s work on the Ibis 1000 SIMOX production implanter, documented in a 2002 paper (3 citations), represents a significant engineering achievement. This second-generation system, in use since 1995, enabled the reliable production of high-quality 150 mm and 200 mm SIMOX wafers, achieving exceptional implant uniformity and repeatability. His earlier foundational work, "A high-current ion implanter system" (1991, 7 citations), established the core design principles for these machines. While his citation counts are modest, Farley’s impact is measured in the practical, industrial-scale manufacturing of silicon-on-insulator substrates—a critical enabler for advanced microelectronics. His contributions helped bridge the gap between laboratory research and commercial viability, making him a respected figure in the field of ion implantation engineering.

Research Focus

Key Achievements

2
H-Index
2
Papers
10
Total Citations
5
Avg Citations/Paper
🏆 Most Cited Paper
A high-current ion implanter system
7 citations · 1991
📈 Most Prolific Year: 1991 (1 Papers)
🤝 Key Collaborators: 18
🏛 Institutions: Eaton (United States), Ibis Reproductive Health

Top Papers

  1. 1
  2. 2

Key Collaborators

Contact & Links

Available for collaboration
Content generated · 14 days ago