Papers
2
Total Citations
9
H-Index
2
About
G. Ryding’s career has been defined by pioneering advances in ion implantation technology, with a particular focus on high-throughput systems and the production of SIMOX (Separation by IMplantation of OXygen) wafers. His most influential work, the 1981 paper “A high-throughput mechanically scanned target chamber” (6 citations), introduced a critical innovation that improved the efficiency and scalability of ion implantation processes. This foundational contribution laid the groundwork for his later, more applied achievements. Ryding’s major impact, however, is seen in his 2002 paper on “The Ibis 1000 SIMOX production implanter” (3 citations), which describes the second-generation system that has been instrumental in the commercial manufacture of high-quality 150 mm and 200 mm SIMOX wafers since 1995. This implanter, featuring a newly designed ion source, analyzer, and beamline, achieved exceptional implant uniformity and repeatability, directly enabling the production of silicon-on-insulator substrates essential for advanced microelectronics. Ryding’s work thus bridges fundamental mechanical design and practical manufacturing, leaving a lasting legacy in semiconductor materials engineering.
Research Focus
Key Achievements
Top Papers
- 1A high-throughput mechanically scanned target chamber6 citations · 1981
- 2The Ibis 1000 SIMOX production implanter3 citations · 2002