Ivan Fotev

Helmholtz-Zentrum Dresden-Rossendorf

Papers

2

Total Citations

32

H-Index

2

About

Ivan Fotev is a researcher at the forefront of stretchable electronics and soft matter engineering, with a particular focus on developing novel mechanical-strain-gated switches. His most cited work, a 2021 paper in *Advanced Materials*, introduces a groundbreaking approach to material-embedded circuits that perform logic operations without conventional electronics. Fotev’s major contribution lies in demonstrating a single material system capable of three distinct functionalities: strain-invariant conductivity and an increase in conductivity under strain, enabling "on-switch" behavior. This innovation overcomes the limitations of traditional off-switch designs, which only exhibit decreased conductivity under strain. With over 29 citations, his work has significant implications for sensing, soft robotics, and stretchable electronics, offering a path toward more integrated and resilient devices. Fotev’s research is notable for its potential to simplify circuit design by embedding logic directly into materials, a concept that could revolutionize wearable technology and adaptive systems. His achievements highlight a deep understanding of tunneling barriers and mechanical properties, positioning him as a key contributor to the future of flexible and stretchable electronic systems.

Research Focus

Key Achievements

2
H-Index
2
Papers
32
Total Citations
16
Avg Citations/Paper
🏆 Most Cited Paper
Stretchable Thin Film Mechanical‐Strain‐Gated Switches and Logic Gate Functions Based on a Soft Tunneling Barrier
29 citations · 2021
📈 Most Prolific Year: 2021 (2 Papers)
🤝 Key Collaborators: 9
🏛 Institutions: Helmholtz-Zentrum Dresden-Rossendorf

Top Papers

  1. 1
  2. 2

Key Collaborators

Contact & Links

Available for collaboration
Content generated · 13 days ago