Yingguo Yang
Papers
1
Total Citations
84
H-Index
1
About
Dr. Yingguo Yang is a leading figure in the development of next-generation optoelectronic devices, with a primary focus on wide-bandgap semiconductors and deep-ultraviolet (DUV) photodetection. His most impactful work centers on engineering high-performance, flexible phototransistors using β-Ga₂O₃, a material critical for UV imaging and wearable technologies. In his highly cited 2022 paper (84 citations), Dr. Yang demonstrated a Ta-doped β-Ga₂O₃-based DUV phototransistor that achieved exceptional responsivity and mechanical flexibility, addressing key challenges in integrating rigid semiconductors into bendable electronics. This contribution has been instrumental in advancing the fields of artificial intelligence and wearable optoelectronics. Beyond this flagship study, his research portfolio explores doping strategies and device architectures that push the boundaries of sensitivity and durability in UV sensors. With a growing citation impact, Dr. Yang’s work is shaping the future of energy-efficient, flexible photonics, making him a pivotal researcher for students and scientists interested in the intersection of materials science and practical device engineering.
Research Focus
Key Achievements
Top Papers
- 1