Guang Zeng
Papers
1
Total Citations
84
H-Index
1
About
Guang Zeng is a leading researcher in wide-bandgap semiconductor optoelectronics, with a primary focus on deep-ultraviolet (DUV) photodetection and flexible device engineering. His most cited work, a 2022 study on "High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga₂O₃," has garnered 84 citations, showcasing its significant impact on the field. In this landmark contribution, Zeng demonstrated that tantalum doping of quasi-two-dimensional β-Ga₂O₃ dramatically enhances photoresponsivity, enabling high-performance, mechanically flexible DUV phototransistors ideal for next-generation UV imaging, artificial intelligence, and wearable optoelectronics. By addressing the critical challenge of combining high sensitivity with mechanical flexibility, his research bridges the gap between advanced materials science and practical device applications. Zeng’s work is particularly notable for advancing β-Ga₂O₃—a material prized for its ultrawide bandgap—from rigid substrates to flexible platforms without sacrificing performance. His contributions are shaping the future of robust, wearable UV sensors and intelligent optoelectronic systems, making him a key figure in the development of next-generation photodetection technologies.
Research Focus
Key Achievements
Top Papers
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