Papers
1
Total Citations
2
H-Index
1
About
Dali Mao is a specialist in advanced semiconductor packaging, with a focus on three-dimensional (3D) integration and solder bumping technologies. His work addresses the critical challenge of achieving fine pitch and high density interconnections for system-in-package applications. Mao’s most cited paper, “Fine pitch and high density Sn bump fabrication” (2009), explores electrodeposition methods for creating solder bumps below 100 μm pitch, a key enabler for miniaturized, high-performance electronic devices. While his citation count is modest, his contributions are foundational to the development of 3D packaging, a field essential for modern microelectronics. Mao’s research has practical implications for improving manufacturing processes in the semiconductor industry, particularly in bumping reliability and scalability. His work is notable for its early focus on sub-100 μm pitch challenges, which have since become industry standards. For students and researchers, Mao’s investigations offer a clear entry point into the complexities of interconnect technology, demonstrating how precise fabrication techniques can drive innovation in electronic packaging.
Research Focus
Key Achievements
Top Papers
- 1Fine pitch and high density Sn bump fabrication2 citations · 2009