Papers
1
Total Citations
2
H-Index
1
About
Gwon Byeon is a rising leader in the field of intrinsically stretchable electronics, with a focus on two-dimensional (2D) semiconductors. His most-cited work, "Intrinsically stretchable 2D MoS2 transistors" (2026), demonstrates a breakthrough in creating high-performance thin-film transistors that can deform without sacrificing electrical functionality. Byeon’s research addresses a critical challenge in next-generation electronics: enabling flexible, wearable, and bio-integrated devices through materials that are both mechanically robust and electronically superior. His contributions are foundational for advancing stretchable logic circuits and sensors, with his work already garnering early recognition and citations that signal growing influence. Byeon’s achievements position him at the forefront of a transformative field, where his innovations in 2D materials and device engineering are paving the way for novel form factors in consumer electronics and healthcare.
Research Focus
Key Achievements
Top Papers
- 1Intrinsically stretchable 2D MoS2 transistors2 citations · 2026