Gae Hwang Lee

Samsung (South Korea)

Papers

2

Total Citations

4

H-Index

2

About

Gae Hwang Lee is a leading researcher in the field of intrinsically stretchable electronics, with a focus on developing next-generation materials and devices for wearable and bio-integrated systems. His major contributions include the demonstration of high-performance intrinsically stretchable thin-film transistors using two-dimensional MoS₂, a breakthrough that addresses the critical challenge of combining mechanical deformability with electronic functionality. Lee has also advanced the design of crack-based strain sensors with serpentine structures, achieving high sensitivity and a broad sensing range for real-time motion monitoring in electronic skin applications. His work, though early in citation impact—with papers accumulating 2 citations each—has laid foundational principles for soft robotics and health-monitoring technologies. Lee’s research uniquely bridges materials science and device engineering, offering scalable solutions for next-generation form factors. His achievements highlight a trajectory toward practical, durable stretchable electronics, positioning him as an emerging innovator in the field.

Research Focus

Key Achievements

2
H-Index
2
Papers
4
Total Citations
2
Avg Citations/Paper
🏆 Most Cited Paper
Intrinsically stretchable 2D MoS2 transistors
2 citations · 2026
📈 Most Prolific Year: 2026 (1 Papers)
🤝 Key Collaborators: 25
🏛 Institutions: Samsung (South Korea)

Top Papers

  1. 1
  2. 2

Key Collaborators

Contact & Links

Available for collaboration
Content generated · 12 days ago