Seongmin Heo

Pohang University of Science and Technology

Papers

1

Total Citations

2

H-Index

1

About

Seongmin Heo is a pioneering researcher in the field of intrinsically stretchable electronics, with a focus on two-dimensional (2D) semiconductor devices. His most cited work, "Intrinsically stretchable 2D MoS2 transistors" (2026), introduces a transformative approach to flexible electronics by demonstrating high-performance thin-film transistors that maintain functionality under mechanical strain. This breakthrough addresses a critical challenge in next-generation wearable and bio-integrated systems, where conventional rigid electronics fail. By leveraging 2D molybdenum disulfide (MoS2), Heo’s research enables novel form factors without sacrificing electronic performance. Although his citation count is currently modest—reflecting the recency of his work—his contributions are poised for significant impact as the field of stretchable electronics expands. Heo’s achievements highlight his role in advancing materials science and device engineering, offering a pathway toward durable, conformable electronics for applications in healthcare, robotics, and beyond. His work represents a key step in merging atomic-scale materials with macroscopic flexibility.

Research Focus

Key Achievements

1
H-Index
1
Papers
2
Total Citations
2
Avg Citations/Paper
🏆 Most Cited Paper
Intrinsically stretchable 2D MoS2 transistors
2 citations · 2026
📈 Most Prolific Year: 2026 (1 Papers)
🤝 Key Collaborators: 16
🏛 Institutions: Pohang University of Science and Technology

Top Papers

  1. 1

Key Collaborators

Contact & Links

Available for collaboration
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