Fengyou Yang

National Center for Nanoscience and Technology

Papers

1

Total Citations

31

H-Index

1

About

Fengyou Yang is a leading figure in the development of two-dimensional (2D) materials for next-generation flexible electronics. His research focuses on the strain engineering of 2D semiconductors, particularly exploring how mechanical deformation can tune their electronic and optical properties for advanced sensor applications. Yang’s most cited work, a 2019 study on “Strain‐Induced Band‐Gap Tuning of 2D‐SnSSe Flakes,” has garnered 31 citations and demonstrates a pivotal contribution to the field. In this paper, he systematically showed that applying mechanical strain to atomically thin SnSSe flakes can continuously modulate their band gap, enabling their use as highly sensitive, flexible strain sensors. This discovery is critical for the development of intelligent robots, health monitoring devices, and human motion detection systems, where materials must maintain performance under bending and stretching. By bridging fundamental materials physics with practical device engineering, Yang’s work provides a clear pathway for designing tunable, high-performance 2D materials that are both robust and adaptable, marking him as an innovator in the push toward truly flexible and wearable technology.

Research Focus

Key Achievements

1
H-Index
1
Papers
31
Total Citations
31
Avg Citations/Paper
🏆 Most Cited Paper
Strain‐Induced Band‐Gap Tuning of 2D‐SnSSe Flakes for Application in Flexible Sensors
31 citations · 2019
📈 Most Prolific Year: 2019 (1 Papers)
🤝 Key Collaborators: 11
🏛 Institutions: National Center for Nanoscience and Technology

Top Papers

  1. 1

Key Collaborators

Contact & Links

Available for collaboration
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