Sining Pan

Tsinghua University

Papers

1

Total Citations

9

H-Index

1

About

Sining Pan is a leading researcher in nonvolatile memory design, with a focus on ReRAM-based nonvolatile SRAM (nvSRAM) for energy-efficient computing systems. Their most cited work, "An Error-Free 64KB ReRAM-Based nvSRAM Integrated to a Microcontroller Unit Supporting Real-Time Program Storage and Restoration" (2023, 9 citations), addresses a critical challenge in embedded systems: achieving fast, reliable data backup and restoration with minimal power consumption. Pan’s major contribution lies in the silicon verification of a 64KB nvSRAM macro that integrates ReRAM elements directly with SRAM cells, enabling error-free, high-speed parallel data transfer and rapid power cycling—a feat few have accomplished in practice. This innovation supports real-time program storage and restoration in microcontroller units, paving the way for robust, instant-on computing in IoT and edge devices. With their work bridging the gap between emerging nonvolatile memory technology and practical system integration, Pan is advancing the frontier of energy-efficient, resilient memory architectures. Their research holds promise for applications requiring frequent power gating and fast wake-up, from wearable electronics to industrial controllers.

Research Focus

Key Achievements

1
H-Index
1
Papers
9
Total Citations
9
Avg Citations/Paper
🏆 Most Cited Paper
An Error-Free 64KB ReRAM-Based nvSRAM Integrated to a Microcontroller Unit Supporting Real-Time Program Storage and Restoration
9 citations · 2023
📈 Most Prolific Year: 2023 (1 Papers)
🤝 Key Collaborators: 10
🏛 Institutions: Tsinghua University

Top Papers

  1. 1

Key Collaborators

Contact & Links

Available for collaboration
Content generated · 11 days ago