R V Tominov

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About

R. V. Tominov is a materials scientist and engineer specializing in the development of neuromorphic and memristive devices for next-generation computing. His research focuses on the fabrication and characterization of transparent oxide thin films and crossbar array architectures, with key contributions to resistive switching phenomena in zinc oxide and titanium oxide systems. Tominov’s most cited work, a 2024 study on transparent zinc oxide memristor structures (11 citations), systematically investigates how magnetron sputtering power influences the structural and electrophysical properties of nanocrystalline ZnO films, demonstrating the potential for transparent electronics. His notable 2022 paper on forming-free titanium oxide neuromorphic crossbar arrays (2 citations) presents a 4×4 Ti/TiO₂/Cu array that exhibits resistive switching without requiring forming operations—a critical advancement for energy-efficient robotics and AI hardware. This work showcases his ability to bridge fundamental materials science with practical device integration. Tominov’s research has direct implications for scalable, low-power neuromorphic computing systems, and his ongoing efforts in crossbar array fabrication position him as an emerging contributor to the field of oxide-based memristive technologies.