I. V. Pakhomov

Don State Technical University

Papers

1

Total Citations

4

H-Index

1

About

I. V. Pakhomov is a specialist in the design of radiation-hardened and low-temperature electronics, with a focus on precision analog circuits for extreme environments. His research centers on the development of robust instrumentation amplifiers and sensor interfaces critical for robotics and unmanned aerial vehicles (UAVs) operating under ionizing radiation and cryogenic conditions. His most cited work, "The design features of low-temperature radiation-hardened instrumentation amplifiers and sensor interfaces" (2016, 4 citations), provides a foundational theoretical analysis of generalized instrumentation amplifier structures, enabling reliable signal conditioning in harsh operational settings. This contribution is particularly significant for advancing autonomous systems in space, Arctic exploration, and nuclear applications. Though his citation count is modest, Pakhomov’s work addresses a niche but vital gap in analog circuit resilience, influencing the design of diagnostic systems for next-generation UAVs and robots. His research underscores the importance of tailoring analog front-ends to survive dual stressors—radiation and extreme cold—a challenge often overlooked in mainstream microelectronics.

Research Focus

Key Achievements

1
H-Index
1
Papers
4
Total Citations
4
Avg Citations/Paper
🏆 Most Cited Paper
The design features of low-temperature radiation-hardened instrumentation amplifiers and sensor interfaces
4 citations · 2016
📈 Most Prolific Year: 2016 (1 Papers)
🤝 Key Collaborators: 2
🏛 Institutions: Don State Technical University

Top Papers

  1. 1

Key Collaborators

Contact & Links

Available for collaboration
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