Ronghua Jian

Huzhou University

Papers

1

Total Citations

8

H-Index

1

About

Ronghua Jian is a rising researcher in the field of optoelectronic materials, with a primary focus on lead-free perovskite semiconductors for sustainable energy applications. His most cited work, "Defect characterization and prospective applications of Cs3Bi2I9 perovskite: Insights from surface photovoltage spectroscopy" (2024, 8 citations), represents a significant contribution to understanding the defect physics of bismuth-based perovskites. By employing surface photovoltage spectroscopy, Jian has provided critical insights into charge carrier dynamics and defect states in Cs3Bi2I9, a promising non-toxic alternative to lead-halide perovskites. This work not only advances the fundamental characterization of these materials but also highlights their potential in photovoltaics and photodetectors, addressing key challenges in stability and environmental safety. Though early in his career, Jian’s research has already garnered attention for its rigorous methodology and practical implications, positioning him as a contributor to the next generation of eco-friendly optoelectronic devices. His findings offer a roadmap for optimizing defect engineering in lead-free perovskites, making his work essential reading for researchers exploring sustainable energy solutions.

Research Focus

Key Achievements

1
H-Index
1
Papers
8
Total Citations
8
Avg Citations/Paper
🏆 Most Cited Paper
Defect characterization and prospective applications of Cs3Bi2I9 perovskite: Insights from surface photovoltage spectroscopy
8 citations · 2024
📈 Most Prolific Year: 2024 (1 Papers)
🤝 Key Collaborators: 5
🏛 Institutions: Huzhou University

Top Papers

  1. 1

Key Collaborators

Contact & Links

Available for collaboration
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