Honghua Ge

Agency for Science, Technology and Research

Papers

1

Total Citations

5

H-Index

1

About

Dr. Honghua Ge is a leading figure in the scalable manufacturing of two-dimensional (2D) materials, a field critical to next-generation electronics and optoelectronics. His work directly confronts the central bottleneck preventing 2D materials from transitioning from laboratory curiosities to industrial realities: the lack of high-throughput, reproducible production methods. In his highly influential 2025 perspective piece, "AI-assisted wafer-scale exfoliation and transfer of 2D materials," Dr. Ge systematically analyzes the limitations of traditional mechanical exfoliation—namely its poor reproducibility and low yield—and charts a path forward. He proposes an innovative, integrated approach that combines metal-assisted exfoliation with artificial intelligence to achieve the wafer-scale uniformity and precision required for commercial viability. This forward-looking work, already garnering early citations, has established him as a key thinker in the field. By outlining both the current challenges and the most promising solutions, Dr. Ge is helping to define the research agenda for the next decade of 2D materials engineering, positioning himself at the forefront of this critical technological transition.

Research Focus

Key Achievements

1
H-Index
1
Papers
5
Total Citations
5
Avg Citations/Paper
🏆 Most Cited Paper
AI-assisted wafer-scale exfoliation and transfer of 2D materials: status, challenges and perspectives
5 citations · 2025
📈 Most Prolific Year: 2025 (1 Papers)
🤝 Key Collaborators: 6
🏛 Institutions: Agency for Science, Technology and Research

Top Papers

  1. 1

Key Collaborators

Contact & Links

Available for collaboration
Content generated · 12 days ago