Piezotronics enabled artificial intelligence systems

摘要

Abstract Artificial intelligence (AI) technologies are accelerating the rapid innovations of multifunctional micro/nanosystems for boosting significant applications in flexible electronics, human healthcare, advanced robotics, autonomous control, and human–machine interfaces. III-nitride semiconductors, e.g. GaN, AlN, InN, and their alloys, exhibit superior device characteristics in high-performance opto-/electronics, due to the unique polarization effects in the non-central-symmetric crystal. Piezotronics, coupled with piezoelectric polarization and semiconductor properties, can provide a novel approach for controlling charge carrier transport across the interfacial Schottky barrier or p–n junction in these piezoelectric semiconductors. It means constructing a direct, real-time, seamless interaction between human/machine and environment, which indicates great potential in emerging AI systems. In this article, we review the research progress of piezotronics on III-nitride semiconductors, summarize the fundamental theory of piezotronics, illustrate flexible device process, present emerging piezotronic intelligent GaN-based devices, and provide innovative supports for building adaptive and interactive AI systems.