S. V. Shriram
Papers
1
Total Citations
6
H-Index
1
About
S. V. Shriram is a materials physicist whose work focuses on the correlated electron behavior of vanadium dioxide (VO₂), a material prized for its dramatic insulator–metal transition (IMT) near room temperature. Their most impactful contribution to date is a 2024 study that employs symbolic regression to model how alio-valent doping shifts the IMT temperature—a critical parameter for tailoring VO₂ for real-world devices. By deriving interpretable mathematical expressions from experimental data, Shriram’s approach offers a powerful alternative to black-box machine learning, enabling precise control over transition temperatures for applications ranging from thermochromic smart windows to actuators and switches. This work has already garnered 6 citations, signaling its growing influence in the field of correlated oxides. Shriram’s research bridges fundamental condensed-matter physics with practical materials engineering, providing a roadmap for designing doped VO₂ systems with targeted switching properties. Their contributions are particularly valuable for students and researchers seeking to understand how computational modeling can accelerate the discovery of functional quantum materials.
Research Focus
Key Achievements
Top Papers
- 1