S. K. Srivastava

Indian Institute of Technology Kharagpur

Papers

1

Total Citations

4

H-Index

1

About

S. K. Srivastava is a leading researcher in nanoscale electronics and emerging memory technologies, with a primary focus on oxide-based memristive devices for low-power, high-density computing. His work addresses critical challenges in resistive switching (RS) behavior, particularly the quest for forming-free, highly stable memristors suitable for nanoscale integration. In his highly cited 2025 study, Srivastava systematically explored growth parameters in pulsed-laser-deposited TiO<sub>x</sub> memristors, demonstrating how precise control over deposition conditions can eliminate the electroforming step—a major barrier to device reliability and energy efficiency. This contribution has already garnered 4 citations, reflecting its immediate impact on the field. Srivastava’s research bridges materials science and device engineering, offering a roadmap for scalable, low-power memory and in-memory computing platforms. His work is notable for its comprehensive approach to parameter optimization, providing both fundamental insights and practical guidelines for next-generation nanoscale electronics.

Research Focus

Key Achievements

1
H-Index
1
Papers
4
Total Citations
4
Avg Citations/Paper
🏆 Most Cited Paper
Surfing the Growth Parameters in the Quest for Low‐Power, Forming‐Free, and Highly Stable TiO<i><sub>x</sub></i> Memristors for Nanoscale Electronics
4 citations · 2025
📈 Most Prolific Year: 2025 (1 Papers)
🤝 Key Collaborators: 4
🏛 Institutions: Indian Institute of Technology Kharagpur

Top Papers

  1. 1

Key Collaborators

Contact & Links

Available for collaboration
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