Noriaki Kawamoto
Papers
1
Total Citations
20
H-Index
1
About
Dr. Noriaki Kawamoto is a leading figure in power electronics, whose work has been instrumental in the commercial adoption of silicon carbide (SiC) technology. His research centers on the development and application of wide-bandgap semiconductors, particularly SiC MOSFETs, to revolutionize energy conversion systems. Kawamoto’s most cited work, the 2019 paper “SiC Power Device Evolution Opening a New Era in Power Electronics,” has garnered 20 citations and serves as a seminal overview of how SiC devices are transforming industries—from power supplies and renewable energy to transportation, robotics, and electric utility grids. His contributions have helped bridge the gap between laboratory innovation and real-world deployment, enabling higher efficiency, greater thermal resilience, and reduced system size in power electronics. By championing the shift from traditional silicon to SiC technology, Kawamoto has positioned himself as a key architect of a more sustainable and electrified future. For students and researchers, his work exemplifies how targeted device engineering can drive systemic change across global energy infrastructure.
Research Focus
Key Achievements
Top Papers
- 1SiC Power Device Evolution Opening a New Era in Power Electronics20 citations · 2019