N. Iguchi

About

N. Iguchi is a leading researcher in the field of nonvolatile memory and programmable logic devices, with a focus on atomic-scale switching technologies. Their most notable contribution is the development of a robust Cu atom switch featuring a novel thermally tolerant polymer-solid electrolyte (TT-PSE). This breakthrough, published in 2016, demonstrated a device capable of withstanding over 400°C processing temperatures, making it fully compatible with standard Cu back-end-of-line (BEOL) integration. By selectively eliminating hydrocarbons with weak chemical bindings in the PSE, Iguchi achieved superior thermal stability and reliability—a critical advancement for nonvolatile programmable logic applications. This work has garnered 6 citations, reflecting its significance in addressing key challenges in next-generation memory and logic architectures. Iguchi’s research bridges materials science and device engineering, offering a pathway toward more robust, high-temperature-tolerant electronics. Their contributions are particularly impactful for researchers exploring atomic switches, resistive RAM, and embedded memory solutions, where thermal resilience and CMOS compatibility remain paramount.

Research Focus

Key Achievements

Top Papers

1. 1
   Robust Cu atom switch with over-400°C thermally tolerant polymer-solid electrolyte (TT-PSE) for nonvolatile programmable logic

   6 citations · 2016

Key Collaborators

Contact & Links