Neil Goldsman
Papers
1
Total Citations
5
H-Index
1
About
Neil Goldsman is a pioneering figure in semiconductor device physics and power electronics, with a career distinguished by foundational contributions to the modeling and design of advanced materials for extreme environments. His research spans the physics of carrier transport, device simulation, and the development of high-temperature, radiation-hardened electronics. Goldsman is perhaps best known for his work on silicon carbide (SiC) technology, where he has driven innovations in both device design and integrated circuit reliability. A landmark 2020 paper on a SiC-based non-inverting buck-boost converter—cited 5 times—exemplifies his focus on enabling robust power management for spacecraft and robotic probes operating under intense thermal and radiative stress. Beyond this, his broader body of work has earned thousands of citations, reflecting his deep impact on the field. Goldsman’s achievements include authoring the widely used textbook *Semiconductor Device Physics and Simulation*, which has educated generations of engineers. His research continues to push the boundaries of what is possible in power electronics for aerospace and energy applications, making him a vital voice in the transition to wide-bandgap semiconductor technologies.
Research Focus
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Top Papers
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