Forming-free titanium oxide neuromorphic crossbar array for robotics and AI systems

摘要

The article shows the fabrication and study of 4×4 neuromorphic crossbar array Ti/TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> /Cu. Memristors demonstrated resistive switching without any additional forming operations. The crossbar array exhibits multilevel switching at different U <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">set</inf> = 1.0 V, 1.5 V, and 2.0 V. The results obtained can be used in the fabrication of a forming-free titanium oxide neuromorphic crossbar array for robotics and artificial intelligence systems.