Feixia Tan

Chinese Academy of Sciences

Papers

1

Total Citations

53

H-Index

1

About

Feixia Tan is a leading researcher in the field of advanced electronic materials and devices, with a particular focus on triboelectric nanogenerators and oxide semiconductor transistors. Her most-cited work, "Triboelectric potential tuned dual-gate IGZO transistor for versatile sensory device" (2021), has garnered 53 citations, showcasing her innovative approach to integrating triboelectric effects with indium-gallium-zinc-oxide (IGZO) transistors. This breakthrough enables the development of highly sensitive, self-powered sensory devices that can detect mechanical stimuli and convert them into electrical signals, opening new avenues for wearable electronics and human-machine interfaces. Tan’s contributions lie in bridging the gap between energy harvesting and active sensing, demonstrating how triboelectric potentials can modulate transistor behavior without external power sources. Her work has significant implications for the Internet of Things (IoT) and smart sensor networks, where energy efficiency and multifunctionality are critical. By pioneering dual-gate architectures, she has enhanced the versatility and performance of oxide-based electronics, earning recognition for pushing the boundaries of flexible and adaptive device design.

Research Focus

Key Achievements

1
H-Index
1
Papers
53
Total Citations
53
Avg Citations/Paper
🏆 Most Cited Paper
Triboelectric potential tuned dual-gate IGZO transistor for versatile sensory device
53 citations · 2021
📈 Most Prolific Year: 2021 (1 Papers)
🤝 Key Collaborators: 9
🏛 Institutions: Chinese Academy of Sciences

Top Papers

  1. 1

Key Collaborators

Contact & Links

Available for collaboration
Content generated · 11 days ago