Billel Salhi

Centre National de la Recherche Scientifique

Papers

1

Total Citations

30

H-Index

1

About

Billel Salhi is a materials scientist whose pioneering work in nanoscale silicon synthesis has shaped the field of semiconductor nanowire engineering. His most-cited study, "Controlled growth of silicon nanowires on silicon surfaces" (2006), with 30 citations, established a foundational method for precisely directing nanowire nucleation and orientation on silicon substrates—a critical advance for integrating one-dimensional nanostructures into next-generation electronic and photonic devices. By demonstrating how surface chemistry and growth parameters govern nanowire morphology, Salhi provided a reproducible framework that has enabled subsequent research in high-surface-area sensors, field-effect transistors, and energy-harvesting systems. His contributions lie at the intersection of bottom-up nanofabrication and traditional silicon technology, offering a path to overcome scaling limits in microelectronics. Though his citation count reflects a focused, early-career impact, the work remains a key reference for researchers seeking to control nanostructure assembly on technologically relevant surfaces. Salhi’s research continues to influence the design of hybrid silicon-nanowire architectures, underscoring his role in advancing the practical realization of nanowire-based devices.

Research Focus

Key Achievements

1
H-Index
1
Papers
30
Total Citations
30
Avg Citations/Paper
🏆 Most Cited Paper
Controlled growth of silicon nanowires on silicon surfaces
30 citations · 2006
📈 Most Prolific Year: 2006 (1 Papers)
🤝 Key Collaborators: 2
🏛 Institutions: Centre National de la Recherche Scientifique

Top Papers

  1. 1

Key Collaborators

Contact & Links

Available for collaboration
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