Wysokoczęstotliwościowe drajwery tranzystorów MOSFET mocy

摘要

This paper presents a systematic approach to design high performance gate drive circuits for high speed switching applications. In the project tested two integrated drivers DEIC420, DEIC515, and additionally two discrete drivers 4xZXGD3003 and 8xEL7457 have been designed. The new MOSFET Drivers have been verified by using the universal laboratory in Department of Power Electronics, Electrical Drives and Robotics Silesian University of Technology. (High-Frequency Power MOSFET Drivers ). Slowa kluczowe: drajwer, analiza, straty mocy, tranzystor MOSFET.