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SiC Power Device Evolution Opening a New Era in Power Electronics

Kazuhide Ino, Mineo Miura, Yuki Nakano, Masatoshi Aketa, Noriaki Kawamoto

发表年份
2019
引用次数
20

摘要

A new era in power electronics has been just opened by commercial introduction of silicon carbide (SiC) MOSFETs in a variety of power electronic systems such as power supplies, renewable energy, transportation, heating, robotics, and electric utility transmission/distribution. The utilization of SiC power devices in these systems can enable significant energy saving because of much lower power-loss devices compared to conventional silicon (Si) power devices. In this paper the progress of SiC power transistors is presented in comparison with Si MOSFETs and IGBTs.

关键词

Power semiconductor devicePower electronicsSilicon carbideElectrical engineeringPower moduleElectronicsPower (physics)TransistorInsulated-gate bipolar transistorPower MOSFET

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