Infrared‐Sensitive Memory Based on Direct‐Grown MoS₂–Upconversion‐Nanoparticle Heterostructure

摘要

Abstract Photonic memories as an emerging optoelectronic technology have attracted tremendous attention in the past few years due to their great potential to overcome the von Neumann bottleneck and to improve the performance of serial computers. Nowadays, the decryption technology for visible light is mature in photonic memories. Nevertheless, near‐infrared (NIR) photonic memristors are less progressed. Herein, an NIR photonic memristor based on MoS 2 –NaYF 4 :Yb 3+ , Er 3+ upconversion nanoparticles (UCNPs) nanocomposites is designed. Under excitation by 980 nm NIR light, the UCNPs show emissions well overlapping with the absorption band of the MoS 2 nanosheets. The heterostructure between the MoS 2 and the UCNPs acting as excitons generation/separation centers remarkably improves the NIR‐light‐controlled memristor performance. Furthermore, in situ conductive atomic force microscopy is employed to elucidate the photo‐modulated memristor mechanism. This work provides novel opportunities for NIR photonic memory that holds promise in future multifunctional robotics and electronic eyes.