Monolithically Integrated GaN+CMOS Logic Circuits Design and Electro-Thermal Analysis for High-Voltage Applications

摘要

This paper presents a logic inverter circuit consisting of both CMOS and GaN devices to drive high-torque DC motors requiring high voltages in various robotics applications. The GaN+CMOS inverter can be monolithically integrated with CMOS digital circuits on a single die, accommodating a 5V CMOS logic level input and providing a 30V output voltage using depletion-mode GaN HEMTs without negative gate bias circuitry. Electro-thermal simulations are also performed to analyze the temperature of CMOS devices affected by nearby GaN HEMTs.