Using luminescent materials as the active element for radiation sensors

摘要

Ionizing radiation poses a significant challenge for Earth-based defense applications as well as human and/or robotic space missions. Practical sensors based on luminescence will depend heavily upon research investigating the resistance of these materials to ionizing radiation and the ability to anneal or self-heal from damage caused by such radiation. In 1951, Birks and Black showed experimentally that the luminescent efficiency of anthracene bombarded by alphas varies with total fluence (N) as (I/I₀) = 1/(1 + AN), where I is the luminescence yield, I₀ is the initial yield, and A is a constant. The half brightness (N_1/2) is defined as the fluence that reduce the emission light yield to half and is equal to is the inverse of A. Broser and Kallmann developed a similar relationship to the Birks and Black equation for inorganic phosphors irradiated using alpha particles. From 1990 to the present, we found that the Birks and Black relation describes the reduction in light emission yield for every tested luminescent material except lead phosphate glass due to proton irradiation. These results indicate that radiation produced quenching centers compete with emission for absorbed energy. The purpose of this paper is to present results from research completed in this area over the last few years. Particular emphasis will be placed on recent measurements made on new materials such as europium tetrakis dibenzoylmethide triethylammonium (EuD₄TEA). Results have shown that EuD₄TEA with its relatively small N_1/2 might be a good candidate for use as a personal proton fluence sensor.