A 75MHz MRAM with Pipe-Lined Self-Reference Read Scheme for Mobile/Robotics Memory System

摘要

In this paper, we propose a pipe-lined self-reference read scheme of MRAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system