Artificial Nociceptor Using 2D MoS₂ Threshold Switching Memristor

摘要

An artificial nociceptor realized with a single 2D MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based memristor device is demonstrated in this work. The threshold switching memristor (TSM) device exhibits volatile resistance switching characteristics with low threshold voltage and a high ON-OFF ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> . The Au/MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ag TSM device imitates a nociceptor, a special receptor of a sensory neuron that can detect noxious stimulus and transfer the signal to the central nervous system for preventive actions. The single device exhibits all key features of nociceptors including threshold, relaxation, “no adaptation” and sensitization phenomena of allodynia and hyperalgesia depending on the strength, duration, and repetition of the external stimuli. This work indicates applicability of this device in artificial sensory alarm systems for humanoid robots.