Device Applications of Heterogeneously Integrated Strain-Switched Ferrimagnets/Topological Insulator/Piezoelectric Stacks

摘要

A family of ferrimagnets (CoV2O4, GdCo, TbCo) exhibits out-of-plane magnetic anisotropy when strained compressively and in-plane magnetic anisotropy when strained expansively (or vice versa). If such a ferrimagnetic thin film is placed on top of a topological insulator (TI) thin film and its magnetic anisotropy is modulated with strain, then interfacial exchange coupling between the ferrimagnet (FM) and the underlying TI will modulate the surface current flowing through the latter. If the strain is varied continuously, the current will also vary continuously and if the strain alternates in time, the current will also alternate with the frequency of the strain modulation, as long as the frequency is not so high that the period is smaller than the switching time of the FM. If the strain is generated with a gate voltage by integrating a piezoelectric underneath the FM/TI stack, then that can implement a transconductance amplifier or a synapse for neuromorphic computation.